STM32G031G8U6单片机内部FLASH读写简单学习

此篇限定研究范围为FLASH区域的访问规则。

以下结论均为实测所得：

一、读

1.单字节读例程，单字节读可以从任意地址开始读

uint8_t STMFLASH_ReadByte(uint32_t faddr)

{

  return *(volatile uint8_t*)faddr; 

}

2.半字（2个字节）读例程， 半字读只能从偶数地址开始读 ，从奇数地址读的话单片机就死机了

uint16_t STMFLASH_ReadHalfWord(uint32_t faddr)

{

  return *(volatile uint16_t*)faddr; 

}

3.字（4个字节）读例程， 按字读只能从4的整数倍地址开始读 ，否则单片机死机

uint32_t STMFLASH_ReadWord(uint32_t faddr)

{

  return *(volatile uint32_t*)faddr; 

}

二、写

1.单次写入字节数：

我看G0x1的技术参考手册上说一次写入是72bit（64bit加ecc），我实际测试是单次写入只能是32bit，以实际测试为准

（1）单字节写，写不了，单片机死机

我在HAL库里面把库函数FLASH_Program_DoubleWord改成如下进行验证的

``

static void FLASH_Program_DoubleWord(uint32_t Address, uint64_t Data)

{

/* Set PG bit */

SET_BIT(FLASH->CR, FLASH_CR_PG);

*(uint8_t *)Address = (uint8_t)(Data&0xff);__ISB();

*((uint8_t *)Address+1) = (uint8_t)((Data>>8U)&0xff);__ISB();

*((uint8_t *)Address+2) = (uint8_t)((Data>>16U)&0xff);__ISB();

*((uint8_t *)Address+3) = (uint8_t)((Data>>24U)&0xff);__ISB();

*((uint8_t *)Address+4) = (uint8_t)((Data>>32U)&0xff);__ISB();

*((uint8_t *)Address+5) = (uint8_t)((Data>>40U)&0xff);__ISB();

*((uint8_t *)Address+6) = (uint8_t)((Data>>48U)&0xff);__ISB();

*((uint8_t *)Address+7) = (uint8_t)((Data>>56U)&0xff);

}

``

（2）**半字写，写不了，单片机死机

我在HAL库里面把库函数FLASH_Program_DoubleWord改成如下进行验证的

static void FLASH_Program_DoubleWord(uint32_t Address, uint64_t Data)

{

  /* Set PG bit */

  SET_BIT(FLASH->CR, FLASH_CR_PG);

  *(uint16_t *)Address = (uint16_t)(Data&0xffff);__ISB();

  *((uint16_t *)Address+2) = (uint16_t)((Data>>16U)&0xffff);__ISB();

  *((uint16_t *)Address+4) = (uint16_t)((Data>>32U)&0xffff);__ISB();

  *((uint16_t *)Address+6) = (uint16_t)((Data>>48U)&0xffff);

}

（3）按字写(4个字节，32bit)，可以，HAL库函数FLASH_Program_DoubleWord里面就是按字写的

static void FLASH_Program_DoubleWord(uint32_t Address, uint64_t Data)

{

  /* Set PG bit */

  SET_BIT(FLASH->CR, FLASH_CR_PG);

  /* Program first word */

  *(uint32_t *)Address = (uint32_t)Data;

  /* Barrier to ensure programming is performed in 2 steps, in right order

    (independently of compiler optimization behavior) */

  __ISB();

  /* Program second word */

  *(uint32_t *)(Address + 4U) = (uint32_t)(Data >> 32U);

}

（4） 按64bit写， 写不了，单片机死机

我在HAL库里面把库函数FLASH_Program_DoubleWord改成如下进行验证的

static void FLASH_Program_DoubleWord(uint32_t Address, uint64_t Data)

{

  /* Set PG bit */

  SET_BIT(FLASH->CR, FLASH_CR_PG);

  *(uint64_t *)Address = (uint64_t)Data;

  }

2.写入的首地址规则

经过实际验证得出：**写入首地址必须为8的整数倍，不然就会发生错误：如果为4的整数倍但不是8的整数倍，单片机不会死机，但是写入的值全部变成0x3F，其他既不是4的整数倍也不是8的整数倍的地址，单片机会死机。

按以下代码改变写入首地址即可进行验证

STMFLASH_Write(FLASH_CALIBRATION_ADDR+8,String,sizeof(String));

HAL_Delay(10);

STMFLASH_Read(FLASH_CALIBRATION_ADDR,buffer,sizeof(String)/4+1);

HAL_Delay(10);

Uart_Send_Data(buffer, sizeof(String));