[据ABI Research网站2011年1月26日报道]虽然RF（射频）功率半导体在无线基础设施市场仍处于停滞状态，但在其他市场，尤其是军品市场，形势已开始好转。据美国市场研究机构ABI Research最新报告指出，GaN（氮化镓）作为未来很有潜力的RF功率器件制备材料，将进一步获得市场认可。
(工业和信息化部电子科学技术情报研究所 陈 思)
Military Spending and GaN Adoption Driving RF Power Semiconductor Markets, Says ABI Research
10:48 GMT, January 26, 2011 SCOTTSDALE, Ariz. | Although spending on RF power semiconductors in wireless infrastructure markets has continued to stagnate, other markets – notably the military – are seeing increased activity. Also, according to a new study from ABI Research, Gallium Nitride – long seen as a promising new “material of choice” for RF power semiconductors – is continuing to gain some market traction.
GaN bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide combined with the power handling capabilities of Silicon LDMOS. It is now a mainstream technology which has achieved measurable market share and in future will capture a substantial part of the market.
Other than wireless infrastructure, the vertical market showing the strongest uptick in the RF power semiconductor business has been the military. While the producers of these devices are located in the major industrialized countries, the military market is now so global that equipment buyers can come from anywhere.
“RF Power Semiconductors” examines RF power semiconductor devices that have power outputs of greater than 5 watts and operate at frequencies of up to 3.8 GHz, which represent the bulk of applications in use today.